InAs/GaSb超晶格结构的高分辨X射线衍射分析  

Analysis of High-Resolution X-Ray Diffraction for InAs/GaSb Superlattice

作　　者：张强 房丹 齐晓宇 李含 Zhang Qiang;Fang Dan;Qi Xiaoyu;Li Han(Department of Optical and Electronical Science,Changchun College of Electronic Technology,Changchun,Jilin 130022,China;State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin 130022,China)

机构地区：[1]长春电子科技学院光电科学学院,吉林长春130022 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《激光与光电子学进展》2021年第23期263-269,共7页Laser & Optoelectronics Progress

基　　金：吉林省科技厅中青年科技创新领军人才及团队项目(20200301052RQ)。

摘　　要：在GaSb(100)衬底上利用分子束外延技术生长了InAs/GaSb超晶格结构,利用高分辨X射线衍射方法对其进行分析,得到了摇摆曲线上的卫星峰个数、半峰全宽、衍射峰的强度和位置等信息,计算得到了超晶格材料的界面应变、失配和周期等参量。结合原子力显微镜对两组超晶格样品进行了表面起伏及表面粗糙度的测试和表征,结果发现:50周期InAs(10 ML)/GaSb(10 ML)超晶格样品比短周期和非对称超晶格样品的表面起伏更小,表面粗糙度更低;随着超晶格样品生长周期的递增,摇摆曲线上1级衍射峰的半峰全宽显著减小,样品表面的起伏和连续性得到改善,50周期对称超晶格样品的均方根表面粗糙度可以减小到0.31 nm,摇摆曲线上的卫星峰可以清晰看到±4级衍射峰,1级衍射峰的半峰全宽仅为0.027°,周期厚度为5.59 nm,平均应变为0.43%。High-resolution X-ray diffraction is used to measure and analyze the InAs/GaSb superlattice grown on a GaSb(100) substrate using molecular beam epitaxy to obtain satellite peak number on the rocking curve,full width at half maximum(FWHM),peak intensity,and peak position.Then,the interface strain,mismatch,and InAs/GaSb superlattice period are calculated.In the experiment,the samples’ surface morphology and surface roughness are tested and characterized using an atomic force microscope.The results show that the surface undulation and roughness of the InAs(10 ML)/GaSb(10 ML) superlattice with 50 periods are lower than other superlattice samples(such as the superlattice samples with short period or asymmetric structure).With an increase in the period,FWHM of the 1-order diffraction peak considerably decreases.Consequently,the surface morphology and continuity of the samples are improved.For the InAs(10 ML)/GaSb(10 ML) sample with 50 periods,the root-mean-square roughness is 0.31 nm,more satellite peaks(±4-order) can be observed in the rocking curve,FWHM of the 1-order diffraction peak is 0.027°,the periodic thickness is 5.59 nm,and the average strain is 0.43%.

关 键 词：材料 INAS/GASB超晶格 高分辨X射线衍射 应变 摇摆曲线 

分 类 号：O472[理学—半导体物理]