锗硅异质结双极晶体管空间辐射效应研究进展  

Advance in space radiation effects of SiGe heterojunction bipolar transistors

作　　者：李培[1] 贺朝会[1] 郭红霞[2] 张晋新 魏佳男 刘默寒 LI Pei;HE Chaohui;GUO Hongxia;ZHANG Jinxin;WEI Jia'nan;LIU Mohan(Department of Nuclear Science and Technology,Xi'an Jiaotong University,Xi'an Shaanxi 710049,China;Northwest Institute of Nuclear Technology,Xi'an Shaanxi 710024,China;School of Aerospace Science and Technology,Xidian University,Xi'an Shaanxi 710126,China;National Key Laboratory of Analog Integrated Circuits,Chongqing 400060,China;Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences,Urumqi Xinjiang 830011,China)

机构地区：[1]西安交通大学核科学与技术学院,陕西西安710049 [2]西北核技术研究院,陕西西安710024 [3]西安电子科技大学空间科学与技术学院,陕西西安710126 [4]模拟集成电路国家重点实验室,重庆400060 [5]中国科学院特殊环境功能材料与器件重点实验室,新疆乌鲁木齐830011

出　　处：《太赫兹科学与电子信息学报》2022年第6期523-534,共12页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(12005159);强脉冲辐射环境模拟与效应国家重点实验室开放课题资助项目(SKLIPR2010)。

摘　　要：异质结带隙渐变使锗硅异质结双极晶体管(SiGeHBT)具有良好的温度特性,可承受-180~+200℃的极端温度,在空间极端环境领域具有诱人的应用前景。然而,SiGeHBT器件由于材料和工艺结构的新特征,其空间辐射效应表现出不同于体硅器件的复杂特征。本文详述了SiGeHBT的空间辐射效应研究现状,重点介绍了国产工艺SiGeHBT的单粒子效应、总剂量效应、低剂量率辐射损伤增强效应以及辐射协同效应的研究进展。研究表明,SiGeHBT作为双极晶体管的重要类型,普遍具有较好的抗总剂量和位移损伤效应的能力,但单粒子效应是制约其空间应用的瓶颈问题。由于工艺的不同,国产SiGeHBT还表现出显著的低剂量率辐射损伤增强效应响应和辐射协同效应。Silicon-Germanium Heterojunction Bipolar Transistors(SiGe HBTs)is a strong contender for space applications in extreme environment on account of its superior temperature characteristics,which can bear extreme temperatures from-180℃to 200℃owing to the bandgap grading of heterojunction.Because of new features in material,structure and process,the radiation effects of SiGe HBTs present complex characteristics which are different from those of bulk-Si devices.In this work,the research dynamics and trends of space radiation effects in SiGe HBTs are introduced,and the radiation effects of domestic SiGe HBTs include Single Event Effects(SEE),Total Ionizing Dose(TID)effect,Enhanced Low Dose Rate Sensitivity(ELDRS)and synergistic effect are highlighted.The research shows that SiGe HBT naturally presents favorable build-in TID and displacement damage hardness without any radiation hardening,but the high sensitivity to SEE is a main drawback.Due to the different manufacturing processes,the domestic SiGe HBTs experience significant low dose rate sensitivity and are vulnerable to combined effect of ionizing dose/displacement damage and total ionizing dose on single event effect.

关 键 词：锗硅异质结双极晶体管 单粒子效应 总剂量效应 低剂量率辐射损伤增强效应 电离总剂量/单粒子效应协同效应 电离总剂量/位移损伤协同效应 

分 类 号：TN325[电子电信—物理电子学]