沟槽型VDMOS的重离子辐射失效研究  

Research on Heavy-Ion Radiation Failure of Trench VDMOS

作　　者：廖聪湘 徐海铭 LIAO Congxiang;XU Haiming(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214072

出　　处：《电子与封装》2022年第8期70-73,共4页Electronics & Packaging

摘　　要：空间辐射环境中含有各种高能带电粒子,高能带电粒子与电子器件相互作用可能引发单粒子效应(SEE),单粒子效应中单粒子烧毁(SEB)和单粒子栅穿(SEGR)是两种最主要的单粒子事件。对重离子环境下的器件退化和失效进行了研究,分析了重离子环境下的失效机理,提出了重离子条件下的器件改善结构,同时完成了仿真和重离子实验验证,提升了MOSFET抗重离子能力。Space radiation environment contains a variety of high-energy charged particles, and the interaction of high-energy charged particles with electronic devices may lead to single event effects(SEEs). Single event burnout(SEB) and single event gate rupture(SEGR) are the two most prominent SEEs. The device degradation and failure in heavy ion environment are studied, and the failure mechanism in heavy ion environment is analyzed. The improved structure of device in heavy ion environment is proposed, and the simulations and heavy ion experiments are completed to improve the anti-heavy ion ability of MOSFET.

关 键 词：功率晶体管 沟槽型VDMOS MOSFET 单粒子烧毁 单粒子栅穿 

分 类 号：TN386.6[电子电信—物理电子学]