高压SOI pLDMOS总剂量辐射致BV退化研究  

Study on Total-Ionizing-Dose Radiation Induced BV Degradation of High Voltage SOI pLDMOS

作　　者：黄柯月 吴中华 周淼[3] 陈伟中[1] 王钊 周锌[2] HUANG Keyue;WU Zhonghua;ZHOU Miao;CHEN Weizhong;WANG Zhao;ZHOU Xin(College of Optoelec.Engineer.,Chongqing Univ.of Posts and Telecommun.,Chongqing 400065,P.R.China;State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;The 58th Research Institute of China Electronics Technology Group Corp.,Wuxi,Jiangsu 200235,P.R.China)

机构地区：[1]重庆邮电大学光电工程学院,重庆400060 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [3]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《微电子学》2022年第4期706-710,共5页Microelectronics

基　　金：国家自然科学基金资助项目(62004034)。

摘　　要：对高压SOI pLDMOS器件总剂量辐射效应进行了研究。分析了不同偏置条件下器件击穿电压的退化机理,并使用TCAD在不同氧化层界面引入固定陷阱电荷,仿真了电离辐射总剂量效应。结果表明,总剂量辐射在FOX和BOX引入辐射陷阱电荷Q_(BOX)和Q_(FOX)。Q_(FOX)增加了漏极附近横向电场,降低了埋氧层电场,使击穿位置由体内转到表面,导致击穿电压退化。Q_(BOX)降低了埋氧层电场,降低了埋氧层压降,导致击穿电压退化。The total-ionizing-dose radiation effect in high voltage SOI pLDMOS devices was studied.The degradation mechanism of breakdown voltage under different bias conditions was analyzed,fixed trap charges were introduced at the interface of different oxide layers using TCAD,and the effect of the total ionizing radiation dose was simulated.The results showed that the total dose radiation introduced radiation trap charges Q_(BOX)and Q_(FOX)at FOX and BOX.The Q_(FOX)elevated the transverse electric field near the drain and reduced the buried oxide electric field,shifting the breakdown location from the body to the surface,and leading to degradation of the breakdown voltage.The Q_(BOX)reduced the buried oxide electric field and reduced the buried oxide voltage drop,leading to degradation of the breakdown voltage.

关 键 词：总剂量辐射 SOI pLDMOS 击穿电压 辐射陷阱电荷 

分 类 号：TN386.1[电子电信—物理电子学]