基于交联型丙烯酸酯类共聚物的Krf光刻胶分析  

Study on Krf Photoresist Based on the Cross-linked Acrylate Copolymer

作　　者：耿文练 秦龙 孙小侠 GENG Wenlian;QIN Long;Sun Xiaoxia(Rusemic Microelectronic Materials(Shanghai)Co.,Ltd.,Shanghai 201206,China;CangZhou Sunheat Chemicals Co.,Ltd.,Hebei 061109,China)

机构地区：[1]儒芯微电子材料(上海)有限公司,上海201206 [2]沧州信联化工有限公司,河北061109

出　　处：《集成电路应用》2022年第9期32-35,共4页Application of IC

摘　　要：阐述在40nm以下技术节点的光刻工艺中,深紫外光刻胶(Krf Photoresist)应用比较广泛,仍是使用量最大的光刻胶种类,但已量产的Krf光刻胶由于开发时间较早,在部分工艺中抗刻蚀性能上存在不足。通过使用交联型单体合成一种交联型丙烯酸酯类共聚物,由于其独特的交联网状结构,该树脂与非交联型的树脂相比,其可以显著增强光刻胶树脂在刻蚀工艺中抗刻蚀性能。将该交联型共聚物配制成Krf光刻胶,经测试该光刻胶满足集成电路芯片制造中耐蚀刻要求,并且满足Dense和ISO光刻图形分辨率达到140nm的工艺要求。In the lithography process of technology nodes below 40 nm,deep UV photoresist(Krf Photoresist)is widely used and remains the most used type of photoresist,but the mass-produced Krf photoresist is deficient in etch resistance in some processes due to its early development time.A crosslinked acrylate copolymer was synthesized by using cross-linked monomers,which can significantly enhance the etch resistance of photoresist resins in the etching process compared to non-cross-linked resins due to its unique cross-linked network structure.The cross-linked copolymer was formulated into Krf photoresist,which was tested to meet the etch resistance requirements in IC chip manufacturing and to meet the process requirements of Dense and ISO lithography resolution of 140nm.

关 键 词：集成电路制造 交联型 丙烯酸酯类共聚物 光刻胶 分辨率 刻蚀 

分 类 号：TN405[电子电信—微电子学与固体电子学]