电子级二氯二氢硅制备技术研究进展  

Research Progress on the Preparation Technology of Electronic Grade DCS

作　　者：梁君 刘见华 常欣[1,2] 袁振军 万烨 LIANG Jun;LIU Jian-hua;CHANG Xin;YUAN Zhen-jun;WAN Ye

机构地区：[1]洛阳中硅高科技有限公司,河南洛阳471023 [2]硅基材料制备技术国家工程研究中心,河南洛阳471023 [3]中国恩菲工程技术有限公司,北京100038

出　　处：《有色冶金节能》2022年第6期5-8,15,共5页Energy Saving of Nonferrous Metallurgy

摘　　要：电子级二氯二氢硅主要用于先进集成电路芯片制程中应变硅外延生长,氧化硅、氮化硅以及金属硅化物等薄膜沉积生产工艺,具有沉积速度快、沉积薄膜均匀、温度较低等特点,在集成电路制造中应用广泛,但是目前主要依赖进口的问题仍未解决。本文介绍精馏纯化、吸附络合和歧化反应等二氯二氢硅制备方法的原理、应用研究进展,并进行三种方法的对比,归纳未来的主要研究方向,最后对以电子级二氯二氢硅为原料衍生制备的先进硅基前驱体的应用进行展望。Electronic-grade dichlorosilane(DCS) is mainly used for strained silicon epitaxial growth and thin film deposition production process of silicon oxide, silicon nitride and metal silicides in advanced integrated circuit chip processing. The fast deposition speed, even deposition film and low temperature associated with the usage of DCS has resulted in its widespread use in IC manufacturing, but its import dependence remains an issue. This paper introduced the principles and applications of DCS preparation methods such as distillation purification, adsorption complexation and disproportionation reactions. It compared the above three methods, summarized future research directions, and provided an outlook on the application of advanced silicon-based precursors using electronic-grade DCS as raw material.

关 键 词：二氯二氢硅 多晶硅 集成电路 电子气体 前驱体 精馏纯化 吸附络合 歧化反应 

分 类 号：TQ127.2[化学工程—无机化工]