磁控溅射法制备ITO膜层及其光电性能研究  

Growth and Characterization of ITO Films Deposited by DC Magnetron Sputtering

作　　者：张健[1] 齐振华 李建浩 牛夏斌 徐全国 宗世强 ZHANG Jian;QI Zhen-hua;LI Jian-hao;NIU Xia-bin;XU Quan-guo;ZONG Shi-qiang(School of Mechanical and Power Engineering,Shenyang University of Chemical Technology,Shenyang 110142,China)

机构地区：[1]沈阳化工大学机械与动力工程学院,辽宁沈阳110142

出　　处：《真空》2022年第6期45-50,共6页Vacuum

摘　　要：利用直流磁控溅射法在有机玻璃基底上沉积掺杂氧化铟锡(ITO)透明导电薄膜,在室温条件下,研究了溅射功率、溅射气压、靶基距和氧氩流量比等工艺参数对ITO薄膜光电性能的影响。结果表明,ITO薄膜的透光率随溅射功率和靶基距的增大而减小,当溅射功率为110W、靶基距为70mm时,ITO薄膜的透光性和导电性较为优良。在近紫外光波段和近红外光波段,ITO薄膜的透光率随溅射气压的增大而减小。当氧氩流量比为4:30时,ITO薄膜在500nm到600nm可见光范围内的透光性和综合性能最好。The ITO films were deposited at room temperature by DC magnetron sputtering of a lab-made ITO target on organic glass substrates. The photoelectric property of the ITO film was evaluated by changing the process parameters of sputtering power,sputtering pressure, target distance and oxygen-argon flow ratio. The ITO films were characterized with ultraviolet visible near infrared spectroscopy. The results show that the transmittance of ITO films decreases with the increase of sputtering power and target-substrate distance. When the sputtering power is 110W and the target-substrate distance is 70mm, the transmittance and conductivity of ITO films are better. In the near-ultraviolet light band and the near infrared light band, the transmittance of the ITO film decreases as the sputtering pressure increases. When the oxygen-argon flow ratio is 4:30, the ITO film shows the best transmittance and comprehensive performance in the visible light range from 500nm to 600nm.

关 键 词：ITO薄膜 直流磁控溅射法 溅射功率 溅射气压 光电性能 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]