面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件  

Ultrathin-Barrier AlGaN/GaN Heterostructure Based Power Devices Towards Next-Generation GaN Power Technology

作　　者：黄森[1,2] 张寒 郭富强 王鑫华 蒋其梦[1,2] 魏珂 刘新宇 HUANG Sen;ZHANG Han;GUO Fuqiang;WANG Xinhua;JIANG Qimeng;WEI Ke;LIU Xinyu(High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of ChineseAcademy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所高频高压器件与集成研发中心,北京100029 [2]中国科学院大学集成电路学院,北京100049

出　　处：《电子与封装》2023年第1期11-21,共11页Electronics & Packaging

基　　金：中国科学院前沿科学重点研究项目(QYZDB-SSW-JSC012);国家自然科学基金项目(62074161,6221101004,62004213,U20A20208);国家重点研发计划(2018YFE0125700);北京市科技计划国际科技合作项目(Z201100008420009,Z211100007921018)。

摘　　要：AlGaN/GaN异质结型功率电子器件具有高工作温度、高击穿电压、高电子迁移率等优点,在推动下一代功率器件小型化、智能化等方面具有很大的材料和系统优势。从5种实现增强型GaN基功率电子器件的方法入手,重点介绍了采用超薄势垒AlGaN(小于6 nm)/GaN异质结实现无需刻蚀AlGaN势垒层的GaN基增强型器件的物理机理和实现方法。同时介绍了在超薄势垒AlGaN/GaN异质结构上实现增强型/耗尽型绝缘栅高电子迁移率晶体管单片集成的研究进展,进一步论证了在大尺寸Si基AlGaN/GaN超薄势垒平台上同片集成射频功率放大器、整流二极管、功率三极管等器件的可行性,为Si基GaN射频器件、功率器件、驱动和控制电路的单片集成奠定了技术基础。AlGaN/GaN heterostructure based power electronic devices have the advantages of high operating temperature,high breakdown voltage,and high electron mobility,which have great material and system advantages in promoting the miniaturization and intelligence of next-generation power devices.Five techniques are introduced for the fabrication of GaN-based enhancement-mode power electronic devices.The physical mechanism and fabrication technology of GaN-based enhancement-mode power devices without etching AlGaN barrier layer are presented based on ultrathin-barrier AlGaN(less than 6 nm)/GaN heterostructures.The research progress of monolithically integrated enhancement/depletion-mode insulated gate high electron mobility transistors on the ultrathin-barrier AlGaN/GaN heterostructures is also presented.On-chip integration feasibility of radio frequency power amplifiers,rectifier diodes,power transistors,and other devices on the large-size ultrathin-barrier AlGaN/GaN-on-Si platform is also proposed.A technical foundation for monolithic integration of GaN-based radio frequency devices,power devices,and driver and control circuits is laid.

关 键 词：氮化镓 功率电子器件 ALGAN/GAN异质结 超薄势垒 增强型 功率集成 

分 类 号：TN323.4[电子电信—物理电子学]