宽禁带半导体碳化硅IGBT器件研究进展与前瞻  

Research Progress and Prospect of Wide-Band-Gap Semiconductor Silicon Carbide IGBT

作　　者：张峰 张国良 ZHANG Feng;ZHANG Guoliang(College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学物理科学与技术学院,厦门361005

出　　处：《电子与封装》2023年第1期83-95,共13页Electronics & Packaging

基　　金：国家自然科学基金(12142406)。

摘　　要：碳化硅(SiC)宽禁带半导体材料是目前电力电子领域发展最快的半导体材料之一。绝缘栅双极晶体管(IGBT)是全控型的复合器件,具有工作频率高、开关损耗低、电流密度大等优点,是高压大功率变换器中的关键器件之一。但SiC IGBT存在导通电阻高、关断损耗大等缺点。针对上述挑战,对国内外现有的新型SiC IGBT结构进行了总结。分析了现有的结构特点,结合新能源电力系统的发展趋势,对SiC IGBT的结构改进进行了归纳和展望。Silicon carbide(SiC)wide-band-gap semiconductor material is one of the fastest-developing semiconductor materials in the field of power electronics.Insulator gate bipolar transistor(IGBT)is a full-control compound device with advantages of high frequency,low switching loss and large current density,which is one of the significant devices in high-voltage high-power converters.However,SiC IGBTs have disadvantages like high on-state resistance and large off-state loss.In view of the above challenges,the available new SiC IGBT structures around the world are summarized.Based on the analysis of the existing structural characteristics and the development trend of new energy power systems,the structural improvements of SiC IGBTs are summarized and prospected.

关 键 词：碳化硅 双极型 导通电阻 关断损耗 

分 类 号：TN323.4[电子电信—物理电子学] TN386.2