高压SiC MOSFET研究现状与展望  

Status and Prospect of High-Voltage SiC MOSFET

作　　者：孙培元 孙立杰 薛哲 佘晓亮 韩若麟 吴宇薇 王来利[1] 张峰 SUN Peiyuan;SUN Lijie;XUE Zhe;SHE Xiaoliang;HAN Ruolin;WU Yuwei;WANG Laili;ZHANG Feng(School of Electrical Engineering,Xi’an Jiaotong University,Xi’an 710049,China;College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]西安交通大学电气工程学院,西安710049 [2]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《电子与封装》2023年第1期109-120,共12页Electronics & Packaging

摘　　要：碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)作为宽禁带半导体单极型功率器件,具有频率高、耐压高、效率高等优势,在高压应用领域需求广泛,具有巨大的研究价值。回顾了高压SiC MOSFET器件的发展历程和前沿技术进展,总结了进一步提高器件品质因数的元胞优化结构,介绍了针对高压器件的几种终端结构及其发展现状,对高压SiC MOSFET器件存在的瓶颈和挑战进行了讨论。Silicon carbide(SiC)metal oxide semiconductor field effect transistor(MOSFET)as a wide band semiconductor unipolar power devices,with high frequency,high withstand voltage,high efficiency,high demand in high-voltage applications,has great research value.The development history and latest technology progress of high-voltage SiC MOSFET devices are reviewed,cell optimization structures to further improve the device quality factor are summarized,several edge termination structures for high-voltage devices and their development status are introduced,and limits and challenges of high-voltage SiC MOSFET devices are discussed.

关 键 词：SIC MOSFET 品质因数 终端结构 

分 类 号：TN386.1[电子电信—物理电子学]