基于T型阳极场板下梯度掺杂的多通道AlGaN/GaN肖特基二极管的研究  

Research on Multi-channel AlGaN/GaN Schottky Diodes Based on Gradient Doping under T-Shape Anode Field Plate

作　　者：李洪亮 王策 黄卡玛[1] LI Hong-liang;WANG Ce;HUANG Ka-ma(College of Electronics and Information Engineering,Sichuang University,Chengdu 610065,China)

机构地区：[1]四川大学电子信息学院,四川成都610065

出　　处：《真空电子技术》2023年第2期45-50,共6页Vacuum Electronics

摘　　要：为了降低微波无线能传输系统(MWPT)整流电路模块的能量损耗,使用AlGaN/GaN异质结肖特基二极管(SBD)可以有效地降低整流损耗。本文设计了一种高性能多通道SBD结构,其具有四个周期性重复AlGaN/GaN的异质结构。为了提高器件的反向特性,使用T型阳极和对不同的AlGaN势垒层采用不同掺杂浓度的方式。这种独特的多通道器件结构正向特性有了显著提升,导通电阻降低了74%,达到了2Ω·mm,导通电压降低了57%,达到了0.31 V。由于T型阳极和独特的Si掺杂方式,该结构的击穿电压达到了300 V。It is of great importance to reduce the energy loss of the rectifier circuit module in microwave wireless power transmission system(MWPT).Employing of AlGaN/GaN heterojunction Schottky diodes(SBDs)can effectively reduce the rectifier loss.A high-performance multi-channel SBD structure with four periodically repeating AlGaN/GaN heterostructures is designed.In order to improve the reverse characteristics of the device,T-shape anodes are adopted and different doping concentrations are used for different AlGaN barrier layers.The forward characteristic of this unique multi-channel device structure is significantly improved.Compared with previous reported multi-channel SBDs,the on-resistance(R ON)of the new structure is reduced by 74%to 2Ω·mm,and the on-voltage(V ON)is reduced by 57%to 0.31 V.The breakdown voltage(V BK)of the structure reaches 300 V due to the T-shape anode and the unique Si doping method.

关 键 词：ALGAN/GAN 导通电阻 击穿电压 掺杂 肖特基二极管 

分 类 号：TN311[电子电信—物理电子学]