氧化镓的n型掺杂研究进展  

Research Progress of n-Type Doping of Gallium Oxide

作　　者：蔺浩博 刘宁涛 吴思淼 张文瑞 叶继春[1] LIN Haobo;LIU Ningtao;WU Simiao;ZHANG Wenrui;YE Jichun(Ningbo Institute of Materials Technology and Engineering of the Chinese Academy of Sciences,Ningbo 315201,China;School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [2]宁波大学材料科学与化学工程学院,浙江宁波315211

出　　处：《中国材料进展》2023年第4期277-288,303,共13页Materials China

基　　金：浙江省自然科学基金重点项目(LZ21F040001);宁波市重大科技攻关项目(2022Z016)。

摘　　要：作为一种新兴宽禁带半导体,氧化镓具有宽带隙、高击穿电压、高巴利加优值及良好的热稳定性的优点,在功率电子器件、日盲紫外探测器以及气体探测器等领域有着极大的应用潜力。首先概述了氧化镓相比于其他半导体材料存在的优势,介绍了氧化镓的不同晶相(α、β、γ、δ、ε、κ)的物理性质及相应的潜在应用方向。其次,详细讨论了氧化镓的n型掺杂的研究现状,包括本征缺陷,Si,Ge,Sn以及其他高价元素掺杂的机理和输运调控规律。最后,探讨了氧化镓目前存在的主要问题,包括由于难以形成自由空穴而导致的p型掺杂困难以及本征热导率过低导致的器件难以散热的问题,并对氧化镓未来的发展进行了展望。As an emerging ultrawide bandgap semiconductor,gallium oxide has great application potential in power electronic devices,solar-blind ultraviolet detectors and gas detectors,which has the advantages of wide bandgap,high breakdown voltage,high Baliga s figure of merit and good thermal stability.Firstly,the advantages of gallium oxide over other semiconductor materials are summarized,and the physical properties of different crystalline phases(α,β,γ,δ,ε,κ)of gallium oxide and their corresponding potential application directions are introduced.Secondly,the research status of n-type doping of gallium oxide is discussed in detail,including intrinsic defects,doping mechanism and transport modulation of Si,Ge,Sn and other high-valence dopants.Finally,current main problems of gallium oxide are discussed,including the difficulty of p-type doping and low intrinsic thermal conductivity,and the development forground of gallium oxide in the future is prospected.

关 键 词：氧化镓 N型掺杂 本征缺陷 宽禁带氧化物 半导体 

分 类 号：O471[理学—半导体物理]