晶体管级异质集成技术及其典型应用  

Heterogeneous Integration in Transistors Level and Its Typical Applications

作　　者：陈堂胜[1,2] 戴家赟 吴立枢 孔月婵[1,2] 周书同 齐志央[1] 钟世昌 凌志健 CHEN Tangsheng;DAI Jiayun;WU Lishu;KONG Yuechan;ZHOU Shutong;QI Zhiyang;ZHONG Shichang;LING Zhijian(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期95-100,共6页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2022YFB3404300)。

摘　　要：晶体管级异质集成是后摩尔时代半导体微波器件技术发展的重点方向。介绍了针对平面和纵向两类不同结构器件分别开发的介质键合和金属键合两套外延层转移晶体管级异质集成工艺,研制出基于介质键合工艺的金刚石衬底GaN HEMT微波功率器件和基于金属键合工艺的SiC衬底GaAs PIN限幅器电路。测试结果表明,与常规的SiC衬底GaN HEMT器件相比,金刚石衬底GaN HEMT器件在高热耗工作下器件热阻减小超过50%,连续波工作输出功率和功率附加效率分别提高0.77 dB和5.6个百分点;与常规工艺的GaAs衬底限幅器相比,18~40 GHz SiC衬底GaAs PIN限幅器单片电路限幅电平基本一致,插入损耗改善约0.2 dB,耐功率能力提高3 dB以上。The heterogeneous integration in transistor level is a prior development direction of semiconductor microwave devices technology in post-Moore era.Two kinds of epilayer transfer heterogeneous integration processes in transistor level of dielectric bonding and metal bonding which are developed for planar devices and vertical devices respectively are presented in this paper.The power devices of GaN HEMT on diamond substrate based on dielectric bonding process and the GaAs PIN limiters on SiC substrate based on metal bonding process have been demonstrated.Compared with conventional GaN HEMT on SiC substrate,measurement results show that the thermal resistance of GaN HEMT on diamond decreases more than 50% when operating with high dissipating heat.The output power and power-added efficiency under continuous operation condition increase O.77 dB and 5.6 percent point.Compared with normal limiter on GaAs substrate,the i8-40 GHz GaAs PIN limiter on SiC substrate shows 0.2 dB insertion loss and greater than 3 dB power-resistant ability improvement and about the same amplitude level.

关 键 词：半导体微波晶体管 晶体管级异质集成 外延层转移 低温键合 微波功率器件 限幅器 

分 类 号：TN386[电子电信—物理电子学] TN325.3