Sn-Cu-Au低温圆片键合强度偏低原因分析  

Causes Analysis of Sn-Cu-Au Low Temperature Wafer Bonding with Low Bonding Strength

作　　者：胡立业[1] 何洪涛[1] 杨志[1] HU Liye;HE Hongtao;YANG Zhi(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工艺技术》2023年第5期46-50,共5页Electronics Process Technology

摘　　要：分析了某MEMS器件Sn-Cu-Au低温圆片键合强度偏低的原因,发现该问题主要由“金脆”现象引起。结合实践经验和相关文献,总结了“金脆”现象发生的一般规律,制定了一个可以避免该现象发生的工艺方案,并开展了针对性的验证试验。试验结果表明,通过优化键合焊料系统的组分配比可以避免“金脆”现象的发生,同时也证实了这一措施是可行有效的。Causes of Sn-Cu-Au low temperature wafer bonding with low bonding strength are analyzed□and “gold embrittlement” is found to be the main cause of this problem.Combining practical experience and relevant literatures,the general rules of gold embrittlement phenomenon are summarized,a process plan is developed to avoid this phenomenon,and specific verification tests are conducted.The tests results show that the gold embrittlement problem can be avoided by optimizing the component ratio of the solder,and it is also confirmed that this measure is feasible and effective.

关 键 词：Sn-Cu-Au低温圆片 键合 金脆 金属间化合物 锡基焊料 键合强度 剪切强度 剪切力 

分 类 号：TN605[电子电信—电路与系统]