栅控二极管ESD工艺优化方法研究  

Study on ESD Process Optimization Method of Gate-controlled Diode

作　　者：贺琪 赵晓松 张庆东 顾祥 赵杨婧 HE Qi;ZHAO Xiaosong;ZHANG Qingdong;GU Xiang;ZHAO Yangjing(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,Jiangsu,214072,CHN;School of Electronic&Information Engineering,Nanjing University of Information Science&Technology,Nanjing,210000,CHN)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214072 [2]南京信息工程大学电子与信息工程学院,南京210000

出　　处：《固体电子学研究与进展》2023年第4期366-369,共4页Research & Progress of SSE

摘　　要：为解决通过更改器件设计来提升电路抗静电放电(ESD)能力时成本高的问题,从栅控二极管的工艺出发,研究CAN总线电路抗ESD能力提升方法。通过TCAD仿真,评估了沟道掺杂对于栅控二极管抗ESD能力的影响,发现调整ESD离子注入工艺可以优化栅控二极管导通电阻,提高ESD保护窗口内的泄流能力,将电路抗ESD能力从2000 V提高到3000 V,为电路级芯片的失效问题提供了一种解决方案。In order to solve the problem of high cost when changing the device design to improve the anti-electrostatic discharge(ESD)ability of the circuit,the method of improving the anti-ESD ability of the CAN bus circuit from the process side was studied in this paper.The effect of channel doping on the anti-ESD ability of the gated diode was evaluated by TCAD simulation.It is found that adjusting the ESD ion implantation process can optimize the on-resistance of the gated diode,improve the leakage capability in the ESD protection window,thus increasing the circuit anti-ESD capability from 2000 V to 3000 V,providing a solution to the failure of circuit-level chips.

关 键 词：静电放电 栅控二极管 控制器局域网 传输线脉冲 绝缘层上硅 

分 类 号：TN386[电子电信—物理电子学]