BiCMOS多晶硅栅的光刻和刻蚀工艺分析  

Analysis of Photolithography and Etching Processes for BiCMOS Polycrystalline Silicon Gates

作　　者：白川川 赵海红 汪增 吕晓明 李海军 王昭 张晓情 BAI Chuanchuan;ZHAO Haihong;WANG Zeng;LYU Xiaoming;LI Haijun;WANG Zhao;ZHANG Xiaoqing(Tianshui Tianguang Semiconductor Co.,Ltd.,Gansu 741000,China;School of Science,Lanzhou University of Technology,Gansu 730050,China)

机构地区：[1]天水天光半导体有限责任公司,甘肃741000 [2]兰州理工大学理学院,甘肃730050

出　　处：《集成电路应用》2023年第10期41-43,共3页Application of IC

基　　金：甘肃省科技计划资助项目(21ZD4GE035)。

摘　　要：阐述在0.5μm BiCMOS工艺中的多晶硅栅制备工艺关键试验。试验表面旋涂转速会显著影响涂胶厚度,该参数的变化会影响到多晶硅栅的形貌和物理性能。同时,通过调节曝光量和焦深,可以有效地控制光刻过程的精度,从而确保多晶硅栅结构的准确复现。LAM9400用于刻蚀工艺,在特定刻蚀厚度范围内,多晶硅表现出良好的均匀性。This paper describes the main experiment of polysilicon gate preparation for 0.5μm BiCOMS process.The experiments confirmed that the spin-coating rotation rate notably impacts coating thickness,and this variations will affect the final structures and physical properties of the polysilicon.Meanwhile,precise control over the photolithography process also can be achieved by adjusting exposure time and the depth of focus to make sure accurate reproduction of polysilicon gate structures.LAM9400 was used to the etching process where the polysilicon had showed good etching uniformity over the specific etch thickness range.

关 键 词：半导体制造 BICMOS 多晶硅栅 涂胶 光刻 刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]