30V SGT N-Channel MOSFET总剂量效应研究  

Total Ionizing Dose Effect Study of 30 V SGT N-Channel MOSFET

作　　者：徐海铭[1] 汪敏 XU Haiming;WANG Min(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2023年第11期102-107,共6页Electronics & Packaging

摘　　要：对30V SGT型N-Channel MOSFET进行了两种不同偏置的总剂量辐射实验,随着^(60)Coγ源射线剂量的增加,给出了两种偏置状态下器件实验前后的转移曲线和直流参数变化,揭示了SGT型功率器件随剂量和偏置的变化趋势和机理。研究结果表明,随着总剂量的增加,两种偏置下器件的阈值电压、导通电阻和击穿电压均出现下降的情况。不同之处是OFF态下主要参数发生变化的幅度收窄,下降幅度相对较小。同时,出现了击穿电压先增加后下降的现象,分析认为,在^(60)Coγ源射线的作用下器件沟槽栅极下方的多晶硅屏蔽栅极存在比较厚的氧化层,在低剂量时元胞和终端处的厚氧化层产生总剂量效应,使得SGT型功率器件发生局部场强改变,从而出现该变化。Total ionizing dose radiation experiments with two different biases on 30 V SGT N-channel MOSFET are carried out.As the total dose of^(60)Coγsource rays increases,the transfer curves and DC parameter variations of the devices before and after the experiments for the two biases are given.The trends and mechanisms of the changes of the SGT power devices with the dose and bias are revealed.The results of the study show that the threshold voltage,on-resistance and breakdown voltage of the device under both biases all decrease with the increase of the total ionizing dose.The difference is that the amplitude of the changes in the main parameters in the OFF state is narrowed,with relatively small decreases.At the same time,the phenomenon that the breakdown voltage firstly increases and then decreases occurs.The analysis suggests that under the action of^(60)Coγsource rays,the polysilicon shielding gate below the trench gate of the device has a relatively thick oxide layer,and the thick oxide layer at the cell and termination at the low dose produces a total dose effect,which makes the SGT power device undergo a change in the local field strength,resulting in this changes.

关 键 词：SGT 总剂量效应 阈值电压漂移 MOSFET 

分 类 号：TN432[电子电信—微电子学与固体电子学]