GaSb单晶研究进展  

Research Progress of GaSb Single Crystal

作　　者：刘京明[1,2,3] 杨俊 赵有文[1,2,4] 杨成奥[2] 蒋洞微[2] 牛智川 LIU Jingming;YANG Jun;ZHAO Youwen;YANG Cheng’ao;JIANG Dongwei;NIU Zhichuan(Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Optoelectronic Materials and Devices,Chinese Academy of Sciences,Beijing 100083,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所,中国科学院半导体材料科学重点实验室,低维半导体材料与器件北京市重点实验室,北京100083 [2]光电子材料与器件重点实验室(中国科学院),北京100083 [3]中国科学院大学,北京100049 [4]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《人工晶体学报》2024年第1期1-11,共11页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62374161)。

摘　　要：近年来,锑化物红外技术发展迅速,成为半导体技术的重要发展方向之一。锑化镓(GaSb)作为典型的Ⅲ-Ⅴ族化合物半导体,凭借优异的性能成为锑化物红外光电器件的关键衬底材料。随着锑化物红外技术逐步成熟和应用逐渐开展,人们对GaSb单晶片的需求日益剧增的同时也对其质量提出更高的要求。GaSb单晶片质量直接影响着外延材料和器件性能,这就要求GaSb单晶片具有大尺寸、更低的缺陷密度、更好的表面质量和一致性。本文就GaSb晶体材料的性质、制备方法、国内外机构的研究进展及其应用情况进行了综述,并对其发展前景和趋势进行了展望。In recent years,antimonide infrared technology has developed rapidly and has become one of the important development directions of semiconductor technology.Gallium antimonide(GaSb),as a typicalⅢ-Ⅴcompound semiconductor,has become a key substrate material for antimonide infrared optoelectronics due to its excellent properties.The demand for GaSb wafers is increasing,and higher requirements are also put forward with the maturing and application of antimonide infrared technology.The properties of epitaxial materials and devices are directly affected by substrate quality,so that GaSb substrates are required to have the characteristics of large size,lower defect density,better surface quality and consistency.The properties,growth methods,research progress at home and abroad,as well as applications of GaSb crystal are reviewed in this paper,and the development prospects are also analyzed.

关 键 词：锑化镓 化合物半导体 锑化物 晶体 红外光电器件 

分 类 号：O471[理学—半导体物理]