Si基SiC薄膜物理制备工艺研究进展  

Advances in physical preparation process of SiC thin films on Si substrates

作　　者：苏江滨[1] 朱秀梅 季雪梅 祁昊 潘鹏 何祖明[1] SU Jiangbin;ZHU Xiumei;JI Xuemei;QI Hao;PAN Peng;HE Zuming(School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China)

机构地区：[1]常州大学微电子与控制工程学院,江苏常州213164

出　　处：《常州大学学报（自然科学版）》2024年第1期9-17,共9页Journal of Changzhou University：Natural Science Edition

基　　金：江苏省自然科学基金资助项目(BK20191453);江苏省研究生科研创新计划资助项目(KYCX21_2819,KYCX21_2825)。

摘　　要：随着微纳电子器件集成化程度不断提高,用Si基SiC薄膜取代SiC体单晶引起了人们极大的兴趣,这种方法不仅有利于降低生产成本,还能与Si基大规模集成电路兼容。文章综述了磁控溅射、分子束外延、离子束溅射、离子注入4种物理制备Si基SiC薄膜主要工艺的研究进展,简单阐述了各种工艺对薄膜性能的影响,对各种工艺的优缺点和存在的问题进行了评述,同时指明了Si基SiC薄膜领域未来的发展方向。With the continuous improvement of the integration degree of micro/nano electronic devices,the replacement of SiC bulk single crystal with Si based SiC films is not only conducive to reducing the production cost,but also compatible with Si based large-scale integrated circuits.Therefore,the preparation of SiC thin films on Si substrates has aroused great interest.In this review,the research progress of four main physical preparation processes of Si based SiC thin films,including magnetron sputtering,molecular beam epitaxy,ion beam sputtering and ion implantation,is reviewed.The effects of various processes on the properties of thin films are briefly described.Further,the advantages,disadvantages and existing problems of various processes are reviewed,and the future development direction of Si-based SiC thin films is also pointed out.

关 键 词：SIC薄膜 磁控溅射 分子束外延 离子束溅射 离子注入 

分 类 号：TB35[一般工业技术—材料科学与工程]