NLDMOS器件单粒子效应及Nbuffer加固  

Single-event effect and Nbuffer hardening for NLDMOS device

作　　者：杨强 葛超洋 李燕妃 谢儒彬 洪根深 YANG Qiang;GE Chaoyang;LI Yanfei;XIE Rubin;HONG Genshen(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214000,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214000

出　　处：《集成电路与嵌入式系统》2024年第3期13-18,共6页INTEGRATED CIRCUITS AND EMBEDDED SYSTEMS

摘　　要：提出了一种漂移区具有Nbuffer结构的N型横向扩散金属氧化物半导体(NLDMOS)结构,以提高器件抗单粒子烧毁(single-event burnout,SEB)能力。通过TCAD仿真验证了该结构的电学和抗单粒子特征。在不改变器件性能的前提下,18 V NLDMOS SEB触发电压由22 V提高到32 V,达到理论最大值,即器件雪崩击穿电压。具有Nbuffer结构的NLDMOS器件可以抑制单粒子入射使得器件寄生三极管开启时的峰值电场转移,避免器件雪崩击穿而导致SEB。此外,对于18~60 V NLDMOS器件的SEB加固,Nbuffer结构依然适用。A single-event burnout(SEB)hardened design based on N-type lateral double-diffused metal-oxide-silicon(NLDMOS)devices with a Nbuffer layer is proposed in this paper.The electrical and single-event characteristics of NLDMOS is verified by TCAD simula-tion.Without changing the device performance,the 18 V NLDMOS SEB trigger voltage increases from 22 V to 32 V,reaching the theo-retical maximum,which is the avalanche breakdown voltage of the device.The NLDMOS device with an Nbuffer structure can suppress the peak electric field transfer when the parasitic bipolar transistor is turned on due to single paricle incident,and avoid avalanche break-down of the device causing SEB.Furthermore,Nbuffer is also suitable for SEB hardening of 18~60 V NLDMOS.

关 键 词：LDMOS 单粒子烧毁 Nbuffer 抗辐射加固 TCAD 

分 类 号：TN306[电子电信—物理电子学]