FinFET器件单粒子翻转物理机制研究评述  

Review on the physical mechanisms of single event upset of FinFET devices

作　　者：王仕达 张洪伟[1,2] 唐民 梅博[1] 孙毅[1] WANG Shida;ZHANG Hongwei;TANG Min;MEI Bo;SUN Yi(China Academy of Space Technology,Beijing 100094,China;College of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]中国空间技术研究院,北京100094 [2]国防科技大学计算机科学与技术学院,长沙410073

出　　处：《航天器环境工程》2024年第2期225-233,共9页Spacecraft Environment Engineering

摘　　要：鳍式场效应晶体管(FinFET)器件由于其较高的集成度以及运算密度,已成为未来航天应用领域的重要选择。FinFET器件的辐射敏感性与其制作工艺和工作条件息息相关。为了解FinFET器件的单粒子翻转(SEU)敏感机制,文章结合国内外开展的相关研究,从SEU机理出发,分析了器件特征尺寸、电源电压和入射粒子的线性能量传输(LET)值等不同条件对器件SEU敏感性的影响,最后结合实际对FinFET器件SEU的研究发展方向进行展望。Fin field-effect transistor(FinFET)devices have become an important choice for future space applications due to their high integration and high computational density.The radiation sensitivity of FinFET devices is closely related to their fabrication processes and operating conditions.To understand the single event upset(SEU)sensitivity mechanism of FinFET devices,a number of relevant researches conducted both domestically and abroad were reviewed in this article.Based on the SEU machanism,the influence of different operating conditions such as the feature size of FinFET devices,the power supply voltage,and the linear energy transfer(LET)values of incident particles on the SEU susceptibility of FinFETs were analyzed.Finally,an outlook on the research direction for SEUs of FinFET devices based on practical applications was provided.

关 键 词：鳍式场效应晶体管 单粒子翻转 软错误率 静态随机存取存储器 

分 类 号：TN386[电子电信—物理电子学] V416.5[航空宇航科学与技术—航空宇航推进理论与工程]