背腔刻蚀型横向激励薄膜体声波谐振器制备技术研究  

The Study of Based on Back Cavity Etching and Lateral Exciting Film Bulk Acoustic Resonato

作　　者：徐阳[1,2] 司美菊 吴高米[2,3] 刘文怡 巩乐乐 甄静怡 余奇 陈金琳 XU Yang;SI Meiju;WU Gaomi;LIU Wenyi;GONG Lele;ZHEN Jingyi;YU Qi;CHEN Jinlin(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;NIICAS(Chongqing)Technology Co.,Ltd,Chongqing 401332,China;Academy of Chips Technology,China Electronics Technology Group,Chongqing 401332,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]国知创芯(重庆)科技有限公司,重庆401332 [3]中电科芯片技术(集团)有限公司,重庆401332

出　　处：《压电与声光》2024年第3期296-299,共4页Piezoelectrics & Acoustooptics

摘　　要：随着移动通信技术的快速发展,薄膜体声波滤波器逐渐向高频和大带宽方向发展。该文研究了POI(LiNbO_(3)/SiO_(2)/Si)基片上背腔刻蚀型横向激励薄膜体声波谐振器制作工艺,通过研究POI基IDT光刻、背腔硅刻蚀等工艺,确定了IDT层曝光量和背腔刻蚀等关键工艺参数。研制出的背腔刻蚀型横向激励薄膜体声波谐振器,其谐振频率为4565 MHz,反谐振频率为5035 MHz,机电耦合系数为20.86%。此制备工艺对研究高频、大带宽薄膜体声波滤波器具有重要的参考意义。With rapid development in mobile technology,film bulk acoustic resonators have developed in a high frequency and wide bandwidth direction.This study focuses on the technological process of back cavity etching and a lateral exciting film bulk acoustic resonator on the POI(LiNbO3/SiO2/Si).On the study of the IDT optical lithography,etching and back cavity corrosion,the critical process parameters are determined.The frequency response curve shows that resonance and antiresonance frequencies were 4565 and 5035 MHz,respectively.The effective electromechanical coupling coefficient was 20.86%,which is significant for research on high frequency and wide bandwidth film bulk acoustic resonators.

关 键 词：干法刻蚀 刻蚀速率 横向激励 机电耦合系数 薄膜体声波谐振器 

分 类 号：TN305.7[电子电信—物理电子学] TN65