TSV电镀过程中Cu生长机理的数值模拟研究进展  

Progress of Numerical Simulation of Cu Growth Mechanism During Electroplating of TSV

作　　者：许增光 李哲 钟诚 刘志权 XU Zengguang;LI Zhe;ZHONG Cheng;LIU Zhiquan(Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China;Shenzhen Institute of Advanced Electronic Materials,Shenzhen 518101,China;Shenzhen College of Advanced Technology,University of Chinese Academy of Sciences,Shenzhen 518055,China)

机构地区：[1]中国科学院深圳先进技术研究院,广东深圳518055 [2]深圳先进电子材料国际创新研究院,广东深圳518101 [3]中国科学院大学深圳先进技术学院,广东深圳518055

出　　处：《电子与封装》2024年第6期34-41,共8页Electronics & Packaging

基　　金：广东省重点领域研发计划(2023B0101040002);国家自然科学基金青年基金(62304143)。

摘　　要：近年来,电子信息行业的快速发展推动了封装技术的进步,对小型化、轻薄化、高性能和多功能化的电子设备提出了更高要求。硅通孔(TSV)技术是一种重要的先进封装技术,电沉积铜是其关键步骤之一。综述了TSV电镀过程中Cu生长的机理及数值模拟研究进展。TSV的深孔特性导致Cu生长过程中电流密度分布不均匀,从而产生不同的生长模式。有机添加剂在调节电流密度和防止缺陷填充方面发挥了关键作用。随着计算机技术的发展,数值模拟成为研究TSV电镀铜的重要手段,可降低实验成本,优化工艺参数。对TSV电镀铜的数值模拟发展进行了展望,强调了耦合影响因素的综合模拟是未来研究的重点。In recent years,the rapid development of the electronic information industry has driven the advancement of packaging technology,and put forward higher requirements for miniaturized,thin and light,high performance and multi-functional electronic devices.The through silicon via(TSV)technology is an important advanced packaging technology,in which copper electrodeposition is one of the key steps.The mechanism and numerical simulation progress of Cu growth in TSV during electroplating are reviewed.The deep-hole nature of TSV leads to uneven current density distribution during Cu growth,resulting in different growth modes.Organic additives play a key role in regulating the current density and preventing defect filling.With the development of computer technology,numerical simulation becomes an important tool to study TSV Cu electroplating,which can reduce the experimental cost and optimize the process parameters.The development of numerical simulation for TSV Cu electroplating is prospected,and the integrated simulation of coupled influencing factors is emphasized as the focus of future research.

关 键 词：三维封装 TSV 电镀铜 数值模拟 

分 类 号：TN305.94[电子电信—物理电子学]