InP衬底上制备GaInAsP/GaInAs双结太阳电池的研究  

Development of GaInAsP/GaInAs solar cells grown on InP substrate

作　　者：张恒[1] 刘如彬[1] 张启明[1] 孙强[1] ZHANG Heng;LIU Rubin;ZHANG Qiming;SUN Qiang(Tianjin Institute of Power Source,Tianjin 300384,China)

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2024年第7期1375-1379,共5页Chinese Journal of Power Sources

摘　　要：基于InP衬底的GaInAsP/GaInAs太阳电池是制备五至六结叠层太阳电池必需的低带隙子电池。采用MOCVD制备了与InP衬底晶格匹配的Ga_(0.47)In_(0.53)As三元材料和Ga_(0.16)In_(0.84)As_(0.3)P_(0.7)四元材料,禁带宽度分别为0.77和1.11 eV,它们都具有较高的晶体质量。以此为有源层制备了GaInAsP/GaInAs双结叠层太阳电池,该双结太阳电池的开路电压为1.09V,光电转换效率为11.2%(AM0,25℃)。InP lattice-matched GaInAsP/GaInAs solar cells are of great importance to the development of III-V tandem solar cells with five or six junctions.High qualified Ga_(0.47)In_(0.53)As and Ga_(0.16)In_(0.84)As_(0.3)P_(0.7) materials with bandgap of 0.77 and 1.11 eV respectively were fabricated on InP substrates by metalorganic chemical vapor deposition(MOCVD).By means of optimizing the subcells and tunnel junction,GaInAsP/GaInAs solar cells with Voc=1.09 V andη=11.2%were obtained.

关 键 词：INP GAINASP GAINAS 太阳电池 MOCVD 

分 类 号：TM914[电气工程—电力电子与电力传动]