铜互连CMP工艺技术分析  

Analysis of CMP Process of Copper Interconnection

作　　者：宋红伟 宋洁晶 秦龙 SONG Hongwei;SONG Jiejing;QIN Long(th Research Institute of CETC,Hebei 050057,China)

机构地区：[1]中国电子科技集团公司第13研究所,河北050057

出　　处：《集成电路应用》2024年第7期78-79,共2页Application of IC

摘　　要：阐述CMP设备抛光头压力和抛光液中H_(2)O_(2)浓度对TSV工艺面铜去除速率和平坦化的影响。分析发现,粗抛压力3.0psi、精抛压力1.0psi、H_(2)O_(2)浓度2wt%时CMP加工效率高且通孔碟坑深度≤0.5μm。This paper expounds the effects of polishing head pressure and H2O2 concentration in polishing slurry on copper removal rate and planarization of TSV process surface.It is found that the CMP processing efficiency is high and the hole depth is less than 0.5μm when the rapid polishing pressure is 3.0psi,the slow polishing pressure is 1.0psi and the H2O2 concentration is 2wt%.

关 键 词：集成电路制造 TSV CMP 去除速率 平坦化 

分 类 号：TN405[电子电信—微电子学与固体电子学]