集成电路和功率器件抗辐射工艺加固技术研究综述  

Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device

作　　者：李博[1,2,3] 王磊 刘凡宇[1,3] 陈思远[1,3] 陆江[1,3] 舒磊 LI Bo;WANG Lei;LIU Fanyu;CHEN Siyuan;LU Jiang;SHU Lei(Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049 [3]中国科学院抗辐照器件技术重点实验室,北京100029

出　　处：《原子能科学技术》2024年第S02期512-526,共15页Atomic Energy Science and Technology

基　　金：国家重点研发计划(2022YFB4401700);国家自然科学基金(U22B2043,62374184)。

摘　　要：随着我国空间装备的高速发展,尤其是深空探测器,微电子器件抗辐射性能得到广泛关注。抗辐射工艺加固是实现器件抗辐射性能提升的重要途径之一。本文围绕空间总剂量效应和单粒子效应,对近年来集成电路和功率器件辐射效应机理和工艺加固技术的研究进展进行了介绍和总结,为抗辐射工艺加固技术的发展与应用提供了有益参考。With the rapid development of aerospace equipment and utilization,especially deep space probes,the radiation hardening level of microelectronics has been widely concerned.Radiation hardening by process technology is one of important methods to improve radiation tolerance of spaceborne electronics.In this paper,the recent research progress on the radiation mechanisms and radiation hardening by process technology of integrated circuits and power devices are introduced and summarized,focusing on total ionizing dose effects and single event effects in space.These reviews can provide a useful reference for the development and applications of radiation hardening by process technology.

关 键 词：工艺加固 总剂量效应 单粒子效应 集成电路 功率器件 

分 类 号：TL99[核科学技术—核技术及应用] TN386.1[电子电信—物理电子学]