SiC光导开关欧姆接触制备与性能研究  

Study on the Preparation and Properties of Ohmic Contact on SiC Photoconductive Semiconductor Switch

作　　者：丁蕾 罗燕 袁涛 尚吉扬 魏紫东 周义 DING Lei;LUO Yan;YUAN Tao;SHANG Jiyang;WEI Zidong;ZHOU Yi(Shanghai Institute of Aerospace Electronic Technology,Shanghai,201109,CHN)

机构地区：[1]上海航天电子技术研究所,上海201109

出　　处：《固体电子学研究与进展》2024年第4期357-362,共6页Research & Progress of SSE

摘　　要：Ni/W膜层作为SiC光导开关的欧姆接触膜系,具有接触电阻低、热稳定性好、抗烧蚀能力强等优良性能。通过接触势垒分析、难熔金属选择、欧姆接触膜系优化、热稳定性以及抗烧蚀性能的研究,优选出W膜层作为难熔金属的最佳膜层,此时击穿电压达到了23 kV,Ni/W膜层厚度为100 nm/100 nm~100 nm/150 nm时,比接触电阻率降低到1.6×10^(-4)Ω·cm^(2),且在后续试验验证中,Ni/W膜层表现出良好的高温稳定性及抗大电流烧蚀性能。As the Ohmic contact film system of SiC photoconductive semiconductor switches,Ni/W has excellent properties such as strong ablation resistance,good thermal stability and low con-tact resistance.By studying the contact barrier analysis,the selection of the refractory metal,the opti-mization of the ohmic contact film system,the thermal stability energy,and the anti-ablation perfor-mance,the W film layer is preferably selected as the best film layer of the refractory metal.At this time,the breakdown voltage reached 23 kV,and the Ni/W film layer thickness was 100 nm/100 nm-100 nm/150 nm,and the specific contact resistivity was reduced to 1.6×10^(-4)Ω·cm^(2).In the subse-quent tests,the Ni film layer showed good high temperature stability and anti-ablation properties.

关 键 词：光导开关 碳化硅 欧姆接触 难熔金属 比接触电阻率 

分 类 号：TN36[电子电信—物理电子学]