检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:孔欣[1] Kong Xin(The 29th Research Institute,CETC,Chengdu 610036,China)
机构地区:[1]中国电子科技集团公司第二十九研究所,成都610036
出 处:《微纳电子技术》2024年第12期163-170,共8页Micronanoelectronic Technology
摘 要:6英寸(1英寸=2.54 cm)SiC基GaN晶圆减薄后翘曲和总厚度变化(TTV)较大,给背孔刻蚀工艺带来了极大的挑战。以SF6和O2为刻蚀气体,通过研究气体流量及流量配比、腔体压力、感应耦合等离子体(ICP)功率、偏置功率等参数对SiC刻蚀速率和SiC对GaN选择比的影响,提出了针对SiC的两段式刻蚀方法。其中,主刻蚀阶段以超过0.8μm/min的刻蚀速率完成大部分SiC刻蚀,软着陆阶段提供超过60∶1的SiC对GaN刻蚀选择比,确保SiC刻蚀有效停止在GaN界面。此外,以Cl2和N2为刻蚀气体开发了GaN/AlGaN刻蚀工艺,刻蚀速率约为0.25μm/min。采用上述背孔刻蚀技术制作的0.5μm GaN高电子迁移率晶体管(HEMT)在3.5 GHz下输出功率密度达到约8.4 W/mm,功率附加效率超过57%。聚焦离子束扫描电子显微镜(FIB-SEM)结果表明背孔制作工艺良好。将孔链图形在200℃下烘烤48 h后再进行1000次-55~125℃温度循环,孔链电阻值变化幅度低于8%,证明背孔可靠性良好。该方法为6英寸SiC基GaN HEMT生产提供了可行的背孔刻蚀解决方案。The 6-inch(1-inch=2.54 cm)SiC-based GaN wafers exhibit high warpage and total thickness variation(TTV)after thinning,causing great challenge to the backside via etching process.A two-stage etching method for SiC was proposed through studying the effects of gas flow rate and ratio,chamber pressure,inductively coupled plasma(ICP)power and bias power on SiC etching rate and SiC to GaN selectivity using SF6 and O2 as the etching gases.Most SiC was etched during the main etching stage with an etching rate exceeding 0.8μm/min,while the etching selectivity of SiC to GaN was promoted to higher than 60∶1 during the soft landing stage,ensuring the etching process effectively stopped at the GaN interface.In addition,a GaN/AlGaN etching process was also developed with an etching rate of approximately 0.25μm/min using Cl2 and N2 as the etching gases.The 0.5μm GaN high electron mobility transistor(HEMT)fabricated using the aforementioned backside via etching technology displays an output power density of about 8.4 W/mm and a power added efficiency above 57%at 3.5 GHz.Good fabrication process of the backside via is confirmed by the focused ion beamscanning electron microscope(FIB-SEM)image.The resistance variation of the via chain is within 8%after baked at 200℃for 48 h and then cycled from-55 to 125℃for 1000 times,showing good reliability of the backside via.The method provides feasible backside via etching solution for the production of 6-inch SiC-based GaN HEMTs.
关 键 词:碳化硅 氮化镓 背孔 两段式刻蚀 刻蚀速率 选择比 可靠性
分 类 号:TN305.99[电子电信—物理电子学] TN385TN386.3
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.63