二乙烯三胺对硅片化学机械抛光速率的影响  

Effect of Diethylenetriamine on Chemical Mechanical Polishing Rate of Silicon Wafers

作　　者：杨啸 王辰伟 王雪洁 王海英 张新颖 杨云点 盛媛慧 YANG Xiao;WANG Chenwei;WANG Xuejie;WANG Haiying;ZHANG Xinying;YANG Yundian;SHENG Yuanhui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]北方集成电路技术创新中心(北京)有限公司,北京100176

出　　处：《润滑与密封》2025年第1期138-143,共6页Lubrication Engineering

基　　金：河北省自然科学基金项目(E2019202367)。

摘　　要：为提高硅衬底化学机械抛光(CMP)的去除速率,在硅衬底抛光液中添加哌嗪(PZ)、二乙烯三胺(DETA)、三乙烯四胺(TETA)、乙醇胺(MEA)4种胺类化合物,对比其对硅片抛光速率促进效果。结果表明,4种胺类化合物对硅片抛光速率的促进作用由高到低依次为DETA、TETA、MEA、PZ;当抛光液pH值为10.5,DETA质量分数为0.25%时,硅片的抛光速率高达1 036 nm/min。为揭示DETA促进硅片CMP速率的机制,对添加DETA的抛光液进行接触角、Zeta电位测试及光电子能谱(XPS)分析。结果发现,DETA一方面促进了硅片表面水解形成Si-OH基团,另一方面降低了抛光液中硅溶胶磨料与硅片表面的静电斥力,增强了机械摩擦作用;DETA氨基上的氮原子与硅片表面的硅原子形成N-Si键,N-Si键的形成导致硅片表面Si-Si键极化,极化的Si-Si键更容易被抛光液中的溶解氧氧化,最后氧化物在摩擦力的作用下被脱离硅片表面。To improve the removal rate of silicon substrate chemical mechanical polishing(CMP),four amine compounds including piperazine(PZ),Diethylenetriamine(DETA),triethylenetetramine(TETA),and Ethanolamine(MEA) were added to the silicon substrate polishing solution,and their promoting effects on the polishing rate of silicon wafers were compared.The results indicate that the promoting effect of four amine compounds on the polishing rate of silicon wafers,from high to low,is DETA,TETA,MEA,and PZ.When the pH value of the polishing solution is 10.5 and the weight of DETA is 0.25%,the silicon removal rate is as high as 1 036 nm/min.Contact angle,Zeta potential and X-ray Photoelectron spectroscopy were conducted on the polishing solution with DETA to reveal the mechanism of DETA promoting the removal rate of silicon CMP.It is found that DETA promotes the hydrolysis of silicon wafer surface to form Si-OH,and reduces the electrostatic repulsion between silicon sol abrasive and silicon wafer surface in polishing solution so as to enhance the mechanical friction effect.The nitrogen atom on the amino group of DETA forms an N-Si bond with the silicon atom on the surface of the silicon wafer.The formation of the N-Si bond leads to the polarization of the Si-Si on the surface of the silicon wafer.The polarized Si-Si are more easily oxidized by dissolved oxygen in the polishing solution,and finally the oxide is detached from the surface of the silicon wafer under the action of friction.

关 键 词：化学机械抛光 抛光液 二乙烯三胺 硅衬底 抛光速率 

分 类 号：TH117[机械工程—机械设计及理论]