MOCVD生长的外延层掺杂氧化镓场效应晶体管  

β-Ga_(2)O_(3)Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD

作　　者：郁鑫鑫[1] 沈睿 于含 张钊 赛青林[4] 陈端阳[4,5] 杨珍妮 谯兵 周立坤 李忠辉 董鑫[3] 张洪良 齐红基[4,5] 陈堂胜 YU Xinxin;SHEN Rui;YU Han;ZHANG Zhao;SAI Qinglin;CHEN Duanyang;YANG Zhenni;QIAO Bing;ZHOU Likun;LI Zhonghui;DONG Xin;ZHANG Hongliang;QI Hongji;CHEN Tangsheng(CETC Key Laboratory of Carbon-based Electronics,Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Nanjing 210016,China;State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Fujia Gallium Technology Co.Ltd.,Hangzhou 311421,China;College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China)

机构地区：[1]南京电子器件研究所,中国电科碳基电子重点实验室,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016 [3]吉林大学电子科学与工程学院,集成光电子国家重点实验室,长春130012 [4]中国科学院上海光学精密机械研究所,上海201800 [5]杭州富加镓业科技有限公司,杭州311421 [6]厦门大学化学化工学院,厦门361005

出　　处：《人工晶体学报》2025年第2期312-318,共7页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2022YFB3605504)。

摘　　要：本文基于Ga_(2)O_(3)MOCVD外延材料,开展了Ga_(2)O_(3)场效应晶体管的研制和性能研究。为了降低器件的导通电阻,优化了外延层设计,将掺杂浓度提高至1×10^(18) cm^(-3)以上。通过长沟道器件提取的外延层的电子浓度和场效应迁移率分别为2×10^(18) cm^(-3)和55 cm^(2)/(V·s),相应的沟道方阻为10.3 kΩ/sq。研制的栅漏间距2和16μm的Ga_(2)O_(3)MOSFET器件的比导通电阻分别为2.3和40.0 mΩ·cm^(2),对应的击穿电压分别达到458和2324 V。为了进一步提升器件的击穿电压,采用p型NiO制备栅电极,研制的Ga_(2)O_(3)JFET器件导通电阻显著增大,但击穿电压分别提升至755和3000 V以上。计算了不同栅漏间距器件的功率优值(P-FOM),发现其随栅漏间距的增加先增大后减小,其中栅漏间距为8μm的Ga_(2)O_(3)MOSFET器件获得了最高的P-FOM,达到了192 MW/cm^(2),表明MOCVD外延技术在Ga_(2)O_(3)功率器件上具有重要的应用前景。In this paper,the Ga_(2)O_(3)field-effect transistors were fabricated on the Ga_(2)O_(3)epitaxial material grown by MOCVD,and their performances were studied.In order to reduce the on-resistances of the transistors,the epitaxial layer was optimally designed and the doping concentration was increased to above 1×10^(18) cm^(-3).The electron concentration and field-effect mobility of the epitaxial layer extracted from the long channel transistor were 2×10^(18) cm^(-3) and 55 cm 2/(V·s),respectively,which result in a corresponding channel sheet resistance of 10.3 kΩ/sq.The specific on-resistances of the Ga_(2)O_(3)MOSFETs with gate to drain spacings of 2 and 16μm were 2.3 and 40.0 mΩ·cm^(2),and the corresponding breakdown voltages were 458 and 2324 V,respectively.In order to further improve the breakdown voltages of the transistors,the p-type NiO gates were employed.The on-resistances of the fabricated Ga_(2)O_(3)JFETs were significantly increased,but the breakdown voltages were improved to 755 V and above 3000 V,respectively.The power figure of merits(P-FOMs)of the transistors with different gate to drain spacings were calculated,and it was found that they increased first and then decreased with the increase of the gate to drain spacings.The Ga_(2)O_(3)MOSFET with a gate to drain spacing of 8μm achieved the highest P-FOM,which was 192 MW/cm 2,indicating the MOCVD epitaxial technology demonstrates an important application prospect for Ga_(2)O_(3)power transistors.

关 键 词：氧化镓 MOCVD外延 掺杂 比导通电阻 击穿电压 功率优值 

分 类 号：TN386.1[电子电信—物理电子学]