SU-8的紫外深度光刻模拟  

Simulation of Pattern Transfer Accuracy on SU-8 Resist

作　　者：田学红[1] 刘刚[1] 田扬超[1] 张新夷[2] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029 [2]复旦大学同步辐射研究中心,上海200433

出　　处：《真空科学与技术》2002年第6期417-420,共4页Vacuum Science and Technology

基　　金：国家重点基础研究发展规划课题资助 (No G19990 3 3 10 9)

摘　　要：在微电子机械系统 (MEMS)中 ,大高宽比微结构被广泛应用。由于紫外光衍射效应比较大 ,通过紫外光刻获得高精度的大高度微结构并不容易。本文主要研究了衍射效应对深紫外光刻精度的影响 ,并与实验结果进行了比较 ,理论模拟结果和实验比较吻合。因此 ,通过模拟结果得到不同厚度光刻胶的最佳曝光剂量 。Microstructure with high aspect ratio is widely used in MEMS(micro electromechanical system). But it is hard to fabricate microstructure with high precision and high aspect ratio due to Fresnel diffraction. The pattern transfer accuracy of deep UV-lithography was investigated. The SEM pictures were used to measure the width of the resist structure in different depths. The good agreement between the experimental and theoretical results allows to get the high pattern transfer accuracy microstructure through optimizing exposure dose for different resist thickness.

关 键 词：SU-8 非涅耳衍射 紫外光刻 MEMS 光刻胶 光刻精度 

分 类 号：TN305.7[电子电信—物理电子学]