掺铒GaN薄膜光致发光的研究  

Photoluminscence Properties of Er-Implanted GaN

作　　者：宋淑芳[1] 陈维德[1] 陈长勇[1] 许振嘉[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《中国稀土学报》2002年第6期535-539,共5页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金资助课题(60176025)

摘　　要：采用傅立叶变换红外光谱(FT IR)研究了掺铒GaN薄膜光致发光特性。光致发光谱(PL)的测量结果表明:选用退火时间长的电阻加热退火炉退火,有利于薄膜中晶格损伤的恢复。MOCVD,MBE两种方法制备的GaN薄膜,注入铒,退火后的PL谱形状基本一样;薄膜中O,C的含量越大,可能导致1539nm处的PL强度越强。不同衬底对掺铒GaN薄膜的红外光致发光影响很大,在Si衬底上外延生长的GaN样品峰值在1539nm处的PL积分强度只有Al2O3(0001)衬底上外延生长GaN样品的30%。MBE生长的GaN Al2O3样品,注入铒、退火后,当测量温度从15K变化到300K时,样品发光的温度猝灭是30%。The photoluminscence (PL) properties of Erimplanted GaN thin films were studied. The experimental results indicate that the ion implantation induced damage in host material can be mostly recovered by annealing of a proper duration in conventional resistance heating furnace. The PL spectra for GaN∶Er grown by either MOCVD or MBE show a similar feature, but those samples containing higher O and C concentrations have the higher 1539 nm PL intensity. Moreover, the PL intensity at 1539 nm is seriously affected by what kind of substrates the GaN grown on. The integrated intensity PL peak at 1539 nm for GaN∶Er on Si (111) has only 30% of that grown on Al2O3(0001). The thermal quenching of PL intensity for MBE grown GaN∶Er/Al2O3 sample from 15 to 300 K is 30%.

关 键 词：GAN薄膜 稀土 GAN 铒 光致发光 氮化镓 半导体 

分 类 号：TN304.23[电子电信—物理电子学] O47[理学—半导体物理]