调制掺杂AlGaN/GaN异质结上的Pt肖特基接触  

Pt Schottky Contact on Modulation-doped Al_xGa_(1-x)N/GaN Heterostructure

作　　者：刘杰[1] 沈波[1] 周玉刚[1] 周慧梅[1] 郑泽伟[1] 张荣[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,210093

出　　处：《固体电子学研究与进展》2002年第4期381-384,共4页Research & Progress of SSE

摘　　要：研究了调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基接触的制备工艺 ,并对其进行了 I-V测量。通过改变对样品表面的处理工艺 ,研究了表面处理对调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基结接触特性的影响 ,在 n型掺杂浓度为 7.5× 1 0 1 7cm- 3的 Al0 .2 2 Ga0 .78N样品表面 ,制备得到了势垒高度为 0 .94e V、理想因子为 1 .4的 Pt肖特基接触。这与国外报道的结果接近 (=1 .2 e V,n=1 .1 1 [1 ] )Pt Schottky contacts were fabricated based on modulation doped Al 0.22 Ga 0.78 N/GaN heterostructures and investigated by means of Schottky I V measurement. Also different pre deposition surface treatments were made and found to be crucial to the performance of Schottky contacts based on Al x Ga 1- x N/GaN heterostructures. Pt Schottky contacts with the highest barrier height of 0.94 eV and the smallest ideal factor of 1.4 were obtained in our experiments.

关 键 词：调制掺杂 ALGAN/GAN异质结 肖特基接触 表面处理 

分 类 号：TN386.3[电子电信—物理电子学]