GaN从蓝宝石衬底上激光剥离技术的研究  

Research on the Technology of Laser Lift-off of GaN from Sapphire Substrate

作　　者：徐剑[1] 张荣[1] 王一平[1] 修向前[1] 顾书林[1] 沈波[1] 施毅[1] 刘治国[1] 郑有炓[1] 

机构地区：[1]南京大学物理学系固体微结构国家重点实验室,210093

出　　处：《固体电子学研究与进展》2002年第4期391-394,共4页Research & Progress of SSE

基　　金：国家重点基础研究规划 (973 )项目 G2 0 0 0 0 683;国家杰出青年研究基金 (60 0 2 5 411);国家自然科学基金 (6980 60 0 6;699760 14 ;6963 60 10和 699870 0 1) ;国家"863"计划;江苏省高技术研究计划 (BG2 0 0 10 0 1)

摘　　要：通过激光剥离成功分离了 Ga N膜及其蓝宝石衬底。位于界面处的 Ga N吸收了波长 2 48nm的激光辐射 ,导致其热分解 ,产生 Ga和 N2 气。再将样品加热到 Ga的熔点 (2 9°C)以上 ,即可很方便地除去蓝宝石衬底。对于激光分离前后的 Ga N样品 ,进行了原子力显微镜 (AFM)和 X射线衍射实验 (XRD)的测量 ,证实了剥离过程并未改变 Ga N膜的质量。并进一步讨论了激光剥离的阈值能量密度和避免 Ga N膜破裂的几种方法。Gallium Nitride films grown on sapphire substrates were successfully separated by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of the interfacial layer, yielding metallic Ga and N 2 gas. The substrate can be easily removed by heating above the Ga melting point of 29°C . Atomic force microscopy and X ray diffraction measurements of GaN before and after lift off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. And further discussions on the threshold energy and crack free strategies of laser lift off process have also been presented.

关 键 词：氮化镓 激光剥离 自支撑 X射线衍射 原子力显微镜 

分 类 号：TN304.2[电子电信—物理电子学]