制备AlN薄膜为绝缘埋层的新型SOI材料  

Fabrication of a novel SOI-structure with AlN film as buried insulator

作　　者：门传玲[1] 徐政[1] 安正华[2] 张苗[2] 林成鲁[2] 

机构地区：[1]同济大学材料学院微电子所,上海200092 [2]中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2002年第4期331-334,共4页Journal of Functional Materials and Devices

基　　金：国家重点基础研究专项经费G20000365;国家自然科学基金(No.69976034;No.90101012)

摘　　要：采用离子束增强技术(IBED)在100mm硅片上合成了AlN薄膜。以速率0.05nm/s蒸发高纯Al得到AlN样品,XPS结果证实了成功合成了AlN薄膜,其N/Al比为0.618:1,扩展电阻结果表明其绝缘性能良好,原子力显微镜(AFM)显示其表面平整光滑,均方根粗糙度(RMS)为0.13nm,满足键合需要。利用智能剥离技术(Smart-cutprocess)成功地制备了以AlN薄膜为埋层的SOI(silicon-on-insulator)材料。剖面透射电镜照片(XTEM)给出了此SOI结构,高分辨TEM实验结果表明上层硅具有与衬底硅相似的结晶质量可满足器件制造的要求。Self-heating effects in traditional silicon-on-insulator (SOI) de vices limit the applica-bility of SOI materials in power electronics. Instead of SiO2, AlN as a buried insulator material in SOI-structure was investigated. Ion-beam-enhanced deposition was used to manufac ture large area AlN films. Experimental results indicate that AlN film is obtained with best quali ty at the Al evaporation rate of 0.5 nm/s, it has excellent dielectric property and a smooth surface wi th roughness RMS valuesof 0.13 nm. New SOI structure with AlN film as buried insulator is manufacture d successfully by theSmart-cut process. The observation of high-resolution TEM show that the new SOI structure can meet the requirements of device fabrication.

关 键 词：制备 绝缘埋层 ALN薄膜 键合 SOI 离子束增强沉积 氮化铝 

分 类 号：TN304.12[电子电信—物理电子学]