ZnO薄膜p型掺杂的研究进展  

Recent Advances in Research on p-Type ZnO

作　　者：叶志镇[1] 张银珠[1] 徐伟中[1] 吕建国[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《无机材料学报》2003年第1期11-18,共8页Journal of Inorganic Materials

基　　金：国家重点基础研究专项经费"973"G20000683;国家自然科学基金重大研究规划项目(90101009)

摘　　要：ZnO是一种新型的II-VI族半导体材料,具有许多优异的性能.但由于ZnO存在诸多的本征施主缺陷(如空位氧Vo和间隙锌Zni),对受主产生高度自补偿作用,天然为n型半导体,难以实现p型转变.ZnO薄膜p型掺杂的实现是ZnO基光电器件的关键技术,也一直是ZnO研究中的主要课题,目前已取得重大进展,文章对此进行了详细阐述.ZnO is a novel material for II-VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process on doping derived from the intrinsic donor defects such as oxygen vacancy (V-O) and zinc interstitial (Zn-i) atoms, so n-typed ZnO films are formed naturally and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.

关 键 词：研究进展 ZNO薄膜 P型掺杂 氧化锌 半导体 

分 类 号：TN304.21[电子电信—物理电子学] O474[理学—半导体物理]