浮栅ROM器件的辐射效应实验研究  

Experimental study on irradiation effects in floating gate ROMs

作　　者：贺朝会[1] 耿斌[1] 杨海亮[1] 陈晓华[1] 王燕萍[1] 李国政[1] 

机构地区：[1]西北核技术研究所,西安69信箱13分箱710024

出　　处：《物理学报》2003年第1期180-187,共8页Acta Physica Sinica

摘　　要：浮栅ROM器件的质子和中子辐射效应实验结果表明 ,其 31.9MeV质子和 14MeV中子的辐射效应不是单粒子效应 ,而是一种总剂量效应 .浮栅ROM器件的6 0 Coγ辐照实验验证了这一点 .器件出现错误有个注量或剂量阈值 .动态监测和静态加电的器件都出现数据错误 ,且不能用编程器重新写入数据 .然而不加电的器件在更高注量的质子或中子或更高剂量的γ辐照下未出现错误 .器件刚开始出错时 ,错误数及错误地址都是不确定的 .Experimental results of irradiation effects are given for Floating gate ROMs. The proton and neutron irradiation effects in FLASH ROM and EEPROM are total-dose effects rather than single event effects. This is confirmed by gamma irradiation. There is a fluence dose threshold. Errors occur when the fluence dose is above the threshold, whereas no error occurs below this threshold. Data errors occur in devices that are in measuring during irradiation or irradiated in power on mode, thus new data cannot be written in these devices with programmer. However, under more fluence dose, there can be no error in devices in power off mode, and new data can be written in these devices with programmer. At the beginning of the occurrence of errors, the address and value of the error are at random.

关 键 词：浮栅ROM器件 辐射效应 实验研究 单粒子效应 总剂量效应 只读存储器 

分 类 号：P354.2[天文地球—空间物理学]