MOCVD生长InGaN/GaN MQW紫光LED  

InGaN/GaN MQW Violet-LED Grown by LP-MOCVD

作　　者：李忠辉[1,2] 杨志坚[1,2] 于彤军[1,2] 胡晓东[1,2] 杨华[1,2] 陆曙[1,2] 任谦[1,2] 金春来[1,2] 章蓓[1,2] 张国义[1,2] 

机构地区：[1]北京大学物理学院,介观物理国家重点实验室 [2]北京大学宽禁带半导体研究中心,北京100871

出　　处：《发光学报》2003年第1期107-109,共3页Chinese Journal of Luminescence

基　　金：国家自然科学基金 ( 6 0 2 76 0 10 );国家 86 3计划 ( 2 0 0 1AA3130 6 0 ;2 0 0 1AA313110 ;2 0 0 1AA31314 0 )资助项目

摘　　要：利用LP MOCVD系统生长了InGaN/GaNMQW紫光LED外延片 ,双晶X射线衍射测试获得了 2级卫星峰 ,室温光致发光谱的峰值波长为 399 5nm ,FWHM为 15 5nm ,波长均匀性良好。制成的LED管芯 ,正向电流2 0mA时 ,工作电压在 4V以下。Recently, solid state white lighting, optical data storage and biochemical identification applications have led to a tremendous surge in research aimed at developing high power violet and ultraviolet light emitting diodes(V-LEDs and UV-LEDs). The white LEDs have come to be expected for use in lighting, which consists of a blue LEDs and yellow phosphor or an violet (or UV) LED and red-green-blue phosphors, but conversion efficiency and chromaticity of white LED with violet (or UV) LED were better than that with blue LEDs. Although high-brightness blue LEDs have been realized, high-power violet (or UV) LEDs have not yet been realized due to the high dislocation density. One possible reason for this is considered as the suppression of non-radiative recombination center in In xGa 1-xN active layers. It is known for violet (or UV) LEDs that the addition of a small amount of In to GaN active layer results in the improvement of emission wavelength and efficiency. Recently, the epitaxial lateral overgrowth (ELOG) is effective in reducing the dislocation density, so it can be used to fabricate high-power violet (or UV) LED. Violet-LEDs with InGaN/GaN multi-quantum-wells (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The double crystal X-ray diffraction revealed distinct second order satellite peaks. The emitting peak of PL spectra is at 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with forward voltage about 4V at 20mA injection current.

关 键 词：INGAN 量子阱 紫光LED MOCVD 发光二极管 外延生长 镓铟化合物 氮化镓 GaN 

分 类 号：TN312.08[电子电信—物理电子学] O472.31[理学—半导体物理]