SOI结构P型SiGe沟道混合模式晶体管器件模型研究  

Device Model for SOI P-Type Bipolar-MOS Hybrid Mode Transistors with Strained SiGe Layer

作　　者：夏克军[1] 李树荣[1] 王纯 郭维廉[1] 郑云光[1] 陈培毅[2] 钱佩信[2] 

机构地区：[1]天津大学电信学院,天津300072 [2]清华大学微电子所,北京100084

出　　处：《Journal of Semiconductors》2003年第3期312-317,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :6 9836 0 2 0 )~~

摘　　要：在带有应变SiGe沟道的SOIMOSFET结构中 ,把栅和衬底相连构成了新型的混合模式晶体管 (SiGeSOIBMHMT) .在SIVACO软件的器件数值模拟基础上 ,对这种结构的P型沟道管工作过程作了分析 ,并建立了数学模型 .提出在低电压 (小于 0 7V)下 ,衬底电极的作用可近似等效成栅 ,然后依据电荷增量 (非平衡过剩载流子 )的方法 ,推导出该结构的I V特性方程 .该方程的计算结果与器件模拟结果相一致 .Based on the structure of SOI MOSFET with a buried strained SiGe layer,a novel bipolar-MOS hybrid mode transistor (SiGe SOI BMHMT) is generated by connecting the gate to its substrate.A mathematic model for such a transistor of p type is presented grounding on the numerical device simulation carried out by the software SIVACO.It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply (<0.7V).The equation of its I-V characteristics is then deduced according to the method of charge increment.The calculated results of this equation are consistent with the ones from the numerical device simulation.

关 键 词：晶体管 BMHMT 器件模型 SIGE SOI MOSFET 

分 类 号：TN32[电子电信—物理电子学] TN386.1