Ku波段10W功率PHEMT  

Ku-band 10 W Power PHEMT

作　　者：陈堂胜[1] 杨立杰[1] 周焕文[1] 李拂晓[1] 陈效建[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2003年第1期42-44,50,共4页Research & Progress of SSE

摘　　要：报告了研制的 9.6mm栅宽双δ-掺杂功率 PHEMT,在 fo=1 1 .2 GHz、Vds=8.5 V时该器件输出功率3 7.2 8d Bm,功率增益 9.5 d B,功率附加效率 44.7% ,在 Vds=5～ 9V的范围内 ,该器件的功率附加效率均大于42 % ,两芯片合成 ,在 1 0 .5～ 1 1 .3 GHz范围内 ,输出功率大于 3 9.92 d Bm,最大功率达到 40 .3 7d Bm,功率增益大于 9.9d B,典型的功率附加效率 40 %。The developed double δ-doped power PHEMT with 9.6 mm gate periphery delivers 37.28 dBm output power with 9.5 dB power gain and 44.7% power added efficiency (PAE) at 11.2 GHz with V ds =8.5 V. The device works with PAE more than 42% when the V ds varies between 5～9 V. The combination of two chips demonstrates output power more than 39.92 dBm with more than 9.9 dB power gain and 40% typical PAE across the band of 10.5～11.3 GHz and the highest output power reaches 40.37 dBm.

关 键 词：KU波段 功率PHEMT 内匹配 赝配高电子迁移率晶体管 固态功率放大器 

分 类 号：TN722.75[电子电信—电路与系统] TN32