晶体管发射结正向电容的测量及分析  

Measurement and Analysis of the Forward-biased Emitter-base Capacitance

作　　者：周正刚[1] 杨恒青[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2003年第1期96-102,共7页Research & Progress of SSE

摘　　要：晶体管发射结电容对晶体管的频率特性有很重要的影响 ,正确测量发射结正向偏压电容仍是很重要的课题。文中提出用交流测量和直流测量结合来测量晶体管发射结的正向偏压电容 ,分析了晶体管发射结正向电容随偏压的变化。文中还对大圆片测试图形中的晶体管进行了测试 ,估算了晶体管的正向渡越时间的范围 ,并得到晶体管发射结中等正向偏压以下的势垒电容。The emitter capacitance of transistor has a very important effect on the frequency performance of the transistor.It's still an important topic to measure correctly the forward-biased emitter-base capacitance.A method of combining the AC measurement and the DC measurement to measure the forward-biased emitter-base capacitance of the transistor is presented.The relation between the capacitance and the biased voltage is also analyzed.The measurement is also made on the transistor in the test structure on the wafer.The range of the base transit times is estimated and the emitter-base space-charge region capacitance under middle range forward-biased voltage is obtained.

关 键 词：电容 测量 结型晶体管 发射结 势垒电容 正向渡越时间 

分 类 号：TM53[电气工程—电器] TN304.07[电子电信—物理电子学]