一种新的高成品率InP基T型纳米栅制作方法  

A Novel High-Yield InP-Based T-Shaped Nanometer-Gate Fabrication Technique

作　　者：石华芬[1] 张海英[1] 刘训春[1] 陈宝钦[1] 刘明[1] 王云翔[1] 

机构地区：[1]中国科学院微电子中心

出　　处：《Journal of Semiconductors》2003年第4期411-415,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (编号 :G2 0 0 0 0 683 0 40 4)~~

摘　　要：提出了一种新的 PMMA/ PMGI/ PMMA三层胶复合结构 ,通过一次对准和电子束曝光、多次显影在 In PPHEMT材料上制作出高成品率的 T型纳米栅 .在曝光显影条件变化 2 0 %的情况下 ,In P HEMT成品率达到 80 %以上 ;跨导变化范围在 5 90～ 6 10 m S/ mm,夹断电压为 - 1.0～ - 1.2 V,器件的栅长分布均匀 .这种新的结构工艺步骤少 ,工艺宽容度大 ,重复性好 。A novel PMMA/PMGI/PMMA trilayer resist structure is introduced.By using only a single alignment,e beam exposure and a series of development steps,high yield T shaped nanometer gate on InP PHEMT material is fabricated.Yields as high as 80% was achieved with the exposure dosesand development times variance of 20%,the extrinsic transconductances vary from 590mS/mm to 610mS/mm,while the cut off voltage is between -1 0V and -1 2V.With all these data,it is concluded that the gate lengths were highly uniform.The new trilayer resist structure decreased the process steps.The fabrication process has large latitude,high reliability,and improves yield of nanometer gate devices.

关 键 词：InP 制作方法 三层胶复合结构 PHEMT 电子束曝光 T型纳米栅 磷化铟 电子迁移率晶体管 

分 类 号：TN431[电子电信—微电子学与固体电子学]