Si表面上生长的ZnO薄膜的阴极射线荧光  

Cathodoluminescence of ZnO Films on Silicon

作　　者：许小亮 徐军[2] 徐传明[2] 杨晓杰[2] 郭常新[1] 施朝淑[1] 

机构地区：[1]中国科学院结构分析重点实验室,安徽合肥230026 [2]中国科学技术大学物理系,安徽合肥230026

出　　处：《发光学报》2003年第2期171-176,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50142016);973预研究基金(国科基字[2001]51号);安徽省自然科学基金(0046506)资助项目

摘　　要：几种不同温度下退火的用直流溅射法生长的ZnO/Si样品的阴极射线荧光(CL)光谱显示,当退火温度低于等于800℃时,随着退火温度的升高,薄膜的晶体质量得到了改善,这主要体现在390nm紫外带的发射强度与505nm绿带发射强度的相对比值迅速增加,同时也发生了绿带的红移以及窄化效应。但退火温度超过800℃时绿带就不再红移了,其峰位为525nm。当退火温度为950℃时,紫外带几乎消失,而只剩下绿带,且与纯硅酸锌样品的CL谱一致,掠入射X射线衍射测量表明,确有三角相三元化合物硅酸锌的产生。因此,从ZnO/Si异质结的质量来看,直流溅射法可能不适宜用于生长这样的异质结:因为当退火温度低于800℃且相差较大(如600℃)时,不能得到产生强ZnO紫外发光的晶体质量,而当退火温度接近或高于800℃时,虽然ZnO晶体质量得到了改善从而紫外发光份额迅速增加,但同时也产生了新的三元化合物硅酸锌,将严重影响ZnO/Si异质结的电学输运特性。Among several methods to grow the ZnO film, the DC sputtering (DCS) by using sil icon or silicate substrate appears easier in growth and with lower cost. Ho wever , the later needs high temperature (800～1 000℃) treatment in order to obtain t he film with a qualified orientation. It is then the motivation in our research to study the annealing effect on the structure and the luminescent characteriza tion of the ZnO films. In our previous work, the Xray diffraction with glancin g input angle (GXRD) was measured on asgrown and annealed samples, which indic at ed a triangular compound zinc silicate appeared while the temperature higher the n 800℃. In this work, the cathodoluminescence (CL) spectra of a ZnO film on Si, a nnealed at different temperature, were measured. The results showed that, the cr ystal quality of the film improved with increasing the annealing temperature, wh ile the hexagonal phase of the ZnO film transformed into a kind of mixture phase including a hexagonal and a trigonal phase, after annealing at the temperature lower then 800℃ for one hour. The CL spectrum also shows the intrinsic emiss ion bands of ZnO (two emission bands at 390nm UV band and 505nm green band) and Zn2SiO4(just one emission band at 525nm), in which the ZnO is the main sourc e of the spectrum (this is indicated by the red shift of the green band from 505nm t o the 525nm band, and the width of the green band was narrowed, as increasing th e annealing temperature). Increasing the temperature continuously up to 950℃ ch anged the main source of sample's luminescence from the emission of ZnO to the e mission of zinc silicate (the red shift stopped at the 525nm). This indicates a c reation of new ternary compound Zn2SiO4 in the film. In conclusion, in ord er to obtain a qualified crystalline ZnO films on silicon or silicate glass grown by D CS method, it is necessary to use heat treatment with high temperature. Alth ough the crystalinity of the film was improved

关 键 词：ZNO薄膜 阴极射线荧光 硅衬底 薄膜生长 氧化锌薄膜 高温退火 

分 类 号：TN304.21[电子电信—物理电子学] O484.1[理学—固体物理]