采用金属镓层氮化技术在石英衬底上生长多晶GaN  

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation

作　　者：邵庆辉[1] 叶志镇[1] Nasser N.Morgan 顾星[1] 黄靖云[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术》2003年第2期120-122,共3页Vacuum Science and Technology

基　　金：国家重大基础研究项目基金资助 (No 2 0 0 0 0 683 0 6)

摘　　要：随着多晶GaN材料发光研究的不断深入 ,大面积、价格低廉的多晶GaN基光电器件的研制已成为工业生产中一个重要的研究领域。石英玻璃以其自身特有的优势 ,成为生长多晶GaN材料的较为理想的衬底。本文采用一种新的金属镓层氮化技术 ,使用无定形石英作衬底 ,在常压下制备出多晶GaN。经分析测试表明 ,生长出的多晶GaN为六方结构且质量较好 。A novel technology,named Ga nitridation,has been successfully developed to grow low cost,polycrystalline GaN films on silica substrates in atmosphere pressure.The GaN films were studied with X ray diffraction (XRD) and scanning electron spectroscopy (SEM).XRD spectra show that the polycrystalline GaN films are dominated by high quality grains with a hexagonal crystal structure.SEM micrographs reveal that the characteristic of the surface morphology is the high density,needle shaped crystal grains with a certain preferential crystal growth orientation.We suggest that Ga nitridation is a promising technology to grow large area,high quality,polycrystalline GaN films on silica substrates on industrial scale.

关 键 词：石英衬底 镓层氮化技术 金属 GAN 氮化镓 半导体 多晶材料 

分 类 号：TN304.23[电子电信—物理电子学] O484.41[理学—固体物理]