SiGe异质结双极晶体管频率特性分析  

Analysis of the frequency property in SiGe HBT

作　　者：张鹤鸣[1] 戴显英[1] 吕懿[1] 林大松[1] 胡辉勇[1] 王伟[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《西安电子科技大学学报》2003年第3期293-297,共5页Journal of Xidian University

基　　金：模拟集成电路国家重点实验室基金资助项目(99JS09 1 1DZ0104)

摘　　要：在分析载流子输运和分布的基础上,建立了物理意义清晰的各时间常数模型.模型体现了时间常数与SiGe异质结双极晶体管结构参数及电流密度之间的关系,并且包含了基区扩展效应.同时对特征频率与上述参数之间的关系进行了模拟分析和讨论.The main factor influencing the frequency property in SiGe heterojunction bipolar transistor (HBT) is the delay times during carrier transportation. Based on the analysis of the carrier transportation and distribution, the lime constant models with clearly physical meanings are proposed. The models reveal the relationship between the time constants and the parameters of device structure and the current density in SiGe HBT. The base extending effect is also taken into account in these models. Also, the relationship between fT and the parameters of device structure and the current density is analyzed and discussed.

关 键 词：SIGE异质结双极晶体管 时间常数 特征频率 结构参数 电流密度 基区扩展效应 

分 类 号：TN325.3[电子电信—物理电子学] TN322.8