SiGe HBT大电流密度下的基区渡越时间模型  

A Model for Base Transit Time in SiGe HBT's at High Current Density

作　　者：戴显英[1] 吕懿[1] 张鹤鸣[1] 何林[2] 胡永贵[2] 胡辉勇[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]中国电子科技集团公司电子第二十四研究所

出　　处：《微电子学》2003年第2期86-89,共4页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助(99JS09.1.1DZ0104)

摘　　要：　在考虑基区扩展效应及载流子浓度分布的基础上,建立了SiGeHBT的基区渡越时间模型。该模型既适合产生基区扩展的大电流密度,又适合未产生基区扩展的小电流密度。模拟分析结果表明,与SiBJT相比,SiGeHBT基区渡越时间显著减小,同时表明,载流子浓度分布对基区渡越时间有较大影响。A model for base transit time in SiGe HBT's has been developed, with base extending effect and distribution of carrier concentration taken into considerationThis model is applicable for both high current density, at which base is extended, and low current density, at which base is not extended Simulation based on the model shows that the base transit time in SiGe HBT's dramatically decreased, compared to Si BJT's, and the distribution of carrier concentration has a great influence on the calculations

关 键 词：SiGe-HBT 大电流密度 基区渡越时间模型 载流子浓度分布 迁移率 锗化硅 

分 类 号：TN325.3[电子电信—物理电子学]