The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature  

作　　者：KANGJinfeng LIUXiaoyan TIANDayu WANGWei LIANGuijun XIONGGuangcheng HANRuqi 

机构地区：[1]InstituteofMicroelectronics,PekingUniversity,Beijing100871,China [2]DepartmentofPhysics,PekingUniversity,Beijing100871,China

出　　处：《Chinese Journal of Electronics》2003年第2期270-272,共3页电子学报（英文版）

摘　　要：HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10^-4A/cm^2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

关 键 词：HFO2 高K电介质 离子溅射 退火 氧化铪 

分 类 号：TN304.21[电子电信—物理电子学]