原料对碳化硅单晶生长的影响  

Effects of Raw Materials on the Growth of Silicon Carbide Single Crystal

作　　者：陈之战[1] 施尔畏[1] 肖兵[1] 庄击勇[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2003年第4期737-743,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(50132040)

摘　　要：研究了具有立方结构的碳化硅(β-SiC)粉料在单晶生长过程中的物相变化及对生长晶体均匀性、缺陷等的影响。实验发现,在晶体生长过程中原料的晶型转变和Si、C挥发不一致造成晶体沿生长方向存在一个Si/C摩尔比的最大值。晶体中的针孔等缺陷的形成与原料中的杂质和气相组分偏离Si/C=1摩尔比有关,并通过电子探针得到证实。SiC single crystal was grown by physical vapor transportation (PVT) technique using beta-SiC raw materials. The phase transformation of raw materials during the crystal growth was investigated by XRD. It was found that the phase transition from beta-SiC to alpha-SiC was completed after growth of 30min. The molar ratio of Si/C in the grown crystal was more than 1 and dependent on the growth time. The maximum value of Si/C was obtained at the intermediate growth process. The formation of pinhole in the grown crystal was related to the deviation from stoichiometry of Si/C=1 in the vapor phase and the impurity of raw materials. It was confirmed by EDX analysis.

关 键 词：碳化硅原料 碳化硅单晶 相转变 Si/C摩尔比 针孔 

分 类 号：O78[理学—晶体学]