氮化硼薄膜的厚度对场发射特性的影响  

Effect of Thickness of Thin BN Films on Field Emission Characteristics

作　　者：顾广瑞[1] 李英爱[1] 刘艳梅[2] 陶艳春[3] 何志[1] 殷红[1] 李卫青[1] 冯伟[1] 白玉白[2] 田野[4] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室 [2]吉林大学化学学院 [3]吉林大学超分子结构和谱学开放实验室 [4]吉林省科学技术厅

出　　处：《吉林大学学报（理学版）》2003年第3期352-355,共4页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:59831040).

摘　　要：利用射频磁控溅射方法,在n型(100)Si基底上沉积了不同厚度(54～124nm)的纳米氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1380cm-1和780cm-1)结构.在超高真空系统中测量了不同膜厚的场发射特性,发现阈值电压随着厚度的增加而增大.厚度为54nm的BN薄膜样品阈值电场为10V/μm,当外加电场为23V/μm时,最高发射电流为240μA/cm2.BN薄膜场发射F-N曲线表明,在外加电场作用下,电子隧穿了BN薄膜表面势垒发射到真空.Nanometer boron nitride(BN) thin films with various thickness(54~124 nm) were fixed on the (100)oriented surface of nSi(ρ=0008~002 Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There are only two absorption peaks of the hexagonalBN(hBN) at about 1 380 cm-1 and 780 cm-1 in the FTIR spectra of the BN thin films. The field emission characteristics of the thin BN films were measured in a super high vacuum system. It was found that the field emission characteristics of the thin BN films depend evidently on the thickness of the films. A turnon electric field as low as 10 V/μm is obtained for the ～54 nmthick BN film, and the emission current density is estimated to be higher 240 μA/cm2 at an electric field of 23 V/μm. It is shown by FN curves that the electrons emitted from BN penetrate through the potential barrier at the surface of the BN thin film to vacuum tunneling under the exterior electric field action.

关 键 词：氮化硼薄膜 薄膜厚度 场发射特性 薄膜结构 阈值电压 表面粗糙度 场发射显示器 

分 类 号：TN873.95[电子电信—信息与通信工程] O484.4[理学—固体物理]