用IR及XPS研究Photo-CVD SiO_2薄膜特性  

Properties of Photochemical Vapor Deposition Silicon Dioxide Thin-film Studied by IR and XPS

作　　者：刘玉荣[1] 李观启[1] 黄美浅[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2003年第7期61-64,共4页Journal of South China University of Technology(Natural Science Edition)

摘　　要：在低温下采用以低压Xe气激发真空紫外光作光源,以SiH_4和O_2作为反应气体的直接光CVD技术在硅衬底上成功地淀积出SiO_2薄膜。用红外光谱分析发现,薄膜中未出现与Si—H、Si—OH相应的红外吸收峰,Si—O伸缩振动所对应的吸收峰峰位在1054～1069cm^(-1)之间;通过高频C-V特性曲线计算出SiO_2-Si系统中固定氧化物电荷密度在2×10^(10)～3×10^(11)cm^(-2)范围内;XPS分析表明,SiO_2薄膜中Si的2p能级结合能为103.6 eV,界面处亚氧化硅的总含量为每平方厘米3.72×10^(15)个原子。The direct photo-CVD SiO2 thin films were deposited successfully on silicon substrate at low temperature by using the SiH4 and O2 as the reaction gas and the low pressure Xe excited vacuum ultra-violet (VUV) as the photon source. The infrared absorption peaks related to the Si-H and Si-OH bonding do not appear in the FTIR spectrum of films, the absorption peaks related to the Si-O stretching vibration are in the range of 1 055 -1 069 cm-1. The fixed oxide charge density is in the range of 2×1010 ~3×1011 cm -2 by capacitance-voltage ( C-V) characteristics measurements. XPS analysis results show Si(2p) binding energy of the SiO2 film is 103.6 eV, the total amount of Silico-suboxide is 3. 72×1015 cm-2 at the SiO2/Si interface.

关 键 词：光CVD SIO2薄膜 红外光谱 XPS C-V特性 

分 类 号：O484.4[理学—固体物理]